switching diodes 1 publication date: november 2003 skf00044aed MA4X160 (ma160) silicon epitaxial planar type for high-speed switching circuits features ? two isolated elements are contained in one package, allowing high-density mounting ? centrosymmetrical wiring, allowing to free from the taping direction ? short reverse recovery time t rr ? small terminal capacitance c t absolute maximum ratings t a = 25 c parameter symbol rating unit reverse voltage v r 40 v maximum peak reverse voltage v rm 40 v forward current single i f(av) 100 ma (average) double 75 repetitive peak single i frm 225 ma forward current double 170 non-repetitive peak single i fsm 500 ma forward surge current * double 375 junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c parameter symbol conditions min typ max unit forward voltage v f i f = 100 ma 0.95 1.20 v reverse voltage v r i r = 100 a40v reverse current i r v r = 35 v 0.1 a terminal capacitance c t v r = 0 v, f = 1 mhz 0.9 2.0 pf reverse recovery time * t rr i f = 10 ma, v r = 6 v 3 ns i rr = 0.1 i r , r l = 100 ? electrical characteristics t a = 25 c 3 c bias application unit n-50bu 90% pulse generator (pg-10n) r s = 50 ? wave form analyzer (sas-8130) r i = 50 ? t p = 2 s t r = 0.35 ns = 0.05 i f = 10 ma v r = 6 v r l = 100 ? 10% input pulse output pulse i rr = 0.1 i r t r t p t rr v r i f t t a internal connection 4 1 3 2 note) * : t = 1 s 1: cathode 1 2: anode 2 3: cathode 2 4: anode 1 eaij: sc-61 mini4-g1 package unit: mm marking symbol: m1d 2.90 +0.02 ?0.05 0.16 +0.1 ?0.06 0.4 0.2 5? 10? 0.60 +0.10 ?0.05 1.1 +0.2 ?0.1 1.1 +0.3 ?0.1 1.50 +0.25 ?0.05 2.8 +0.2 ?0.3 1.9 0.2 (0.65) (0.2) (0.95) (0.95) 0 to 0.1 34 21 0.5r note) the part number in the parenthesis shows conventional part number. note) 1. measuring methods are based on japanese industrial standard jis c 7031 measuring method for diodes. 2. absolute frequency of input and output is 100 mhz. 3. * : t rr measurement circuit
2 MA4X160 skf00044aed i r ? t a c t ? v r i f(surge) ? t w i f ? v f i r ? v r v f ? t a 10 ? 2 0 0.2 0.4 0.6 0.8 1.0 1.2 10 ? 1 1 10 10 2 10 3 forward voltage v f ( v ) forward current i f ( ma ) t a = 125 c 75 c 25 c ? 20 c 10 ? 3 0 102030405060 10 ? 2 10 ? 1 1 10 10 2 reverse voltage v r ( v ) reverse current i r ( a ) t a = 125 c 75 c 2 5 c 0 1.2 1.0 0.8 0.6 0.4 0.2 ? 40 0 40 80 120 160 ambient temperature t a ( c ) forward voltage v f ( v ) i f = 100 ma 1 ma 10 ma 3 ma 0.1 ma 10 ? 1 1 10 10 2 10 3 10 1 10 ? 1 pulse width t w ( ms ) forward surge current i f(surge) ( a ) t w non repetitive i f(surge) t a = 25 c 10 ? 1 10 1 0102030405060 reverse voltage v r ( v ) terminal capacitance c t ( pf ) f = 1 mhz t a = 25 c 10 ? 3 0 40 80 120 160 ? 40 10 ? 2 10 ? 1 1 10 10 2 ambient temperature t a ( c ) reverse current i r ( a ) v r = 40 v 20 v
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